Carrier transport in InxGa1-xN thin films grown by modified activated reactive evaporation

In the present work, we report the temperature dependent carrier transport properties of InxGa1-xN thin films in the entire composition range grown by modified activated reactive evaporation. The carrier transport in these degenerate semiconductors is controlled by impurity band conduction. A transition from metallic to semiconducting type resistivity was observed for indium rich films. The semiconducting behavior originates from electron-electron interaction and weak localization, whereas higher temperature scattering contributes to the metallic type resistivity. A transition of resistivity behavior from the quantum phenomena to the classical Arrhenius approach was observed for x = 0.12 film. (C) 2011 American Institute of Physics. [doi:10.1063/1.3630000]