Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3630000
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In the present work, we report the temperature dependent carrier transport properties of InxGa1-xN thin films in the entire composition range grown by modified activated reactive evaporation. The carrier transport in these degenerate semiconductors is controlled by impurity band conduction. A transition from metallic to semiconducting type resistivity was observed for indium rich films. The semiconducting behavior originates from electron-electron interaction and weak localization, whereas higher temperature scattering contributes to the metallic type resistivity. A transition of resistivity behavior from the quantum phenomena to the classical Arrhenius approach was observed for x = 0.12 film. (C) 2011 American Institute of Physics. [doi:10.1063/1.3630000]
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