Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3592834
Keywords
-
Categories
Funding
- DFG [P 1.3-A, FOR 1464]
- Forschungszentrum Komplexe Materialien (COMATT, JGU Mainz)
Ask authors/readers for more resources
Besides of their well-known wide range of properties it was recently shown that many of the heavy Heusler semiconductors with 1:1:1 composition and C1(b) structure exhibit a zero band gap behavior and are topological insulators induced by their inverted band structure. In the present study, the electronic structure of the Heusler compounds PtYSb and PtLaBi was investigated by bulk sensitive hard x-ray photoelectron spectroscopy. The measured valence band spectra are clearly resolved and in well agreement to the first-principles calculations of the electronic structure of the compounds. The experimental results give clear evidence for the zero band gap state. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3592834]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available