Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3586775
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Funding
- MEXT [18069002]
- JSPS [20560005]
- Grants-in-Aid for Scientific Research [23246056, 18069002, 20560005] Funding Source: KAKEN
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We investigate the nonradiative carrier recombination (NR) process in Mg-doped p-InN films having lower photoluminescence (PL) intensity than n-InN films. The NR activation energy in the p-type films is found to be in a range of 9-15 meV, which is smaller than that in n-InN films (40-65 meV). We also investigate the effect of the greater mean free path of minority carriers in p-InN. At room temperature the collision rate of minority carriers with NR centers within the radiative lifetime in p-InN is found to be three orders of magnitude greater than that in n-InN. (C) 2011 American Institute of Physics. [doi:10.1063/1.3586775]
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