Related references
Note: Only part of the references are listed.Nitrogen composition dependence of electron effective mass in GaAs1-xNx
T. Dannecker et al.
PHYSICAL REVIEW B (2010)
Effective Band Structure of Random Alloys
Voicu Popescu et al.
PHYSICAL REVIEW LETTERS (2010)
Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range
M. de la Mare et al.
APPLIED PHYSICS LETTERS (2009)
Effect of low nitrogen concentrations on the electronic properties of InAs1-xNx
A. Patane et al.
PHYSICAL REVIEW B (2009)
Zitterbewegung (trembling motion) of electrons in narrow-gap semiconductors
W. Zawadzki et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2008)
Photoluminescence of InNAs alloys: S-shaped temperature dependence and conduction-band nonparabolicity
M. Merrick et al.
PHYSICAL REVIEW B (2007)
Breakup of the conduction band structure of dilute GaAs1-yNy alloys -: art. no. 195307
A Patanè et al.
PHYSICAL REVIEW B (2005)
Unification of the band anticrossing and cluster-state models of dilute nitride semiconductor alloys
A Lindsay et al.
PHYSICAL REVIEW LETTERS (2004)
Role of nitrogen in the mobility drop of electrons in modulation-doped GaAsN/AlGaAs heterostructures
R Mouillet et al.
SOLID STATE COMMUNICATIONS (2003)
High-frequency conductivity of the multi-component cyclotron resonance: a classical approach
M Manger et al.
SUPERLATTICES AND MICROSTRUCTURES (2003)
Terahertz semiconductor-heterostructure laser
R Köhler et al.
NATURE (2002)
Nitrogen-induced enhancement of the electron effective mass in InNxAs1-x
WK Hung et al.
APPLIED PHYSICS LETTERS (2002)
Intrinsic limitations to the doping of wide-gap semiconductors
W Walukiewicz
PHYSICA B-CONDENSED MATTER (2001)
Share Paper
