Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3583378
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Funding
- EU [RII3-CT-2004-506239]
- DFG [DR832/3-1, DFG KO 3743/1-1, AOBJ: 550341]
- EPSRC [EP/G000190/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/G000190/1] Funding Source: researchfish
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We report cyclotron resonance (CR) experiments on the midinfrared alloy InAs(1-x)N(x) grown on GaAs with x from 0% to 1.9%. Using magnetic fields up to 60 T and terahertz photon sources from 3 to 30 THz, we determine the dependence on x of the electron density and CR mass. The increase in the carrier density with increasing x is accompanied by a redshift in the interband photoluminescence emission and is explained in terms of the pinning of the Fermi level to its value at x = 0. The high carrier densities (similar to 10(18) cm(-3)) at x similar to 1% give rise to a CR mass that is only weakly dependent on the excitation energy, significantly weaker than that in InAs. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3583378]
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