Related references
Note: Only part of the references are listed.Multiwavelength micro-Raman analysis of strain in nanopatterned ultrathin strained silicon-on-insulator
O. Moutanabbir et al.
APPLIED PHYSICS LETTERS (2010)
UV-Raman imaging of the in-plane strain in single ultrathin strained silicon-on-insulator patterned structure
O. Moutanabbir et al.
APPLIED PHYSICS LETTERS (2010)
Strain in epitaxial Si/SiGe graded buffer structures grown on Si(100), Si(110), and Si(111) optically evaluated by polarized Raman spectroscopy and imaging
M. Mermoux et al.
JOURNAL OF APPLIED PHYSICS (2010)
The complex evolution of strain during nanoscale patterning of 60 nm thick strained silicon layer directly on insulator
O. Moutanabbir et al.
APPLIED PHYSICS LETTERS (2009)
Effect of strained-Si layer thickness on dislocation distribution and SiGe relaxation in strained-Si/SiGe heterostructures
Jinggang Lu et al.
JOURNAL OF APPLIED PHYSICS (2008)
Relaxation of strain in patterned strained silicon investigated by UV Raman spectroscopy
C. Himcinschi et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2006)
Tunable uniaxial vs biaxial in-plane strain using compliant substrates
H Yin et al.
APPLIED PHYSICS LETTERS (2005)
Siticon device scaling to the sub-10-nm regime
M Leong et al.
SCIENCE (2004)
Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers
TS Drake et al.
APPLIED PHYSICS LETTERS (2003)
SiGe-free strained Si on insulator by wafer bonding and layer transfer
TA Langdo et al.
APPLIED PHYSICS LETTERS (2003)
Share Paper
