Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3589981
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Funding
- Key Project of Chinese National Programs for Fundamental Research and Development [2010CB631002]
- National Natural Science Foundation of China [50901057, 50771078]
- Xi'an Applied Materials Innovation Fund [XA-AM-200904]
- National Ministries and Commissions [6139802-04]
- Fundamental Research Funds for the Central Universities
- Hong Kong Research Grants Council (RGC) [CityU 112510]
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The Raman shift of Delta omega(3) in (001) strained silicon is found to be independent of the azimuthal angle of the patterned structures but exhibits shape dependence in strain relaxation. The tensile strain is reduced from 0.85% in the unpatterned thin film to 0.16% in the cylindrical pillars showing 82% relaxation. It becomes more significant along the width direction of the patterned gratings due to Poisson's effect and only a tensile strain of 0.07% remains. Consequently, the strain state changes from biaxial into uniaxial and is expected to enhance the carrier mobility. Finite element analysis is conducted to elucidate the mechanism. (C) 2011 American Institute of Physics. [doi:10.1063/1.3589981]
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