Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3541883
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Funding
- DARPA/MTO [W911NF-07-1-0156]
- National Science Foundation [0547134]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0547134] Funding Source: National Science Foundation
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Deposition of lanthanide oxides on GaN is investigated as a means to produce stable dielectric with good interface quality. Epitaxial growth of cubic < 111 >-oriented Sc2O3 is observed on GaN [0001] with a lattice mismatch of 7.2%, whereas La2O3 growth, with a lattice mismatch of similar to 21%, results in a mixed phase epitaxial film comprised of the bixbyite and hexagonal allotropes. Substantial roughening accompanies this mixed phase film. By inserting a thin Sc2O3 interfacial layer between La2O3 and GaN and a Sc2O3 capping layer, the crystal quality of the predominantly La2O3 layer is improved and the stack is stabilized against hydroxide formation under ambient conditions. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3541883]
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