Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3554375
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- National Science Council in Taiwan, Republic of China [NSC-98-2120-M-007-002, NSC-96- 2628-M-007-003-MY3]
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The pronounced high interfacial densities of states (D-it) commonly observed around the midgap energy of dielectric/GaAs interfaces are generally considered the culprit responsible for the poor electrical performance of the corresponding inversion-channel metal-oxide-semiconductor field-effect-transistors. In this work, comprehensive D-it spectra as the function of energy (D-it(E)] inside the In0.2Ga0.8As band gap were constructed by using the quasistatic capacitance-voltage and the temperature-dependent conductance method on n- and p-type ultrahigh vacuum (UHV)-Ga2O3(Gd2O3)/In0.2Ga0.8As and atomic-layer-deposited (ALD)-Al2O3/In0.2Ga0.8As metal-oxide-semiconductor capacitors. Unlike the ALD-Al2O3/In0.2Ga0.8As interface giving a D-it spectrum with a high midgap D-it peak, the UHV-Ga2O3(Gd2O3)/In0.2Ga0.8As interface shows a D-it spectrum that monotonically decreases from the valence band to the conduction band with no discernible midgap peak. (C) 2011 American Institute of Physics. [doi:10.1063/1.3554375]
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