4.6 Article

Mechanism for the direct electron injection from Al cathode to the phosphine oxide type electron transport layer

Journal

APPLIED PHYSICS LETTERS
Volume 98, Issue 7, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3555443

Keywords

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Funding

  1. MKE/ITEP [RTI04-01-02, 10028439-2009-22]
  2. MKE/KEIT [KI002104-2010-02]
  3. collaborative R&D program with technology advanced country [2009-advanced-B-015]
  4. MKE [M2009010025]
  5. Ministry of Education, Science, and Technology [2010-0013321]
  6. Korean Government [KRF-2008-314-C00169]
  7. Korea Institute of Industrial Technology(KITECH) [RTI04-01-02] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  8. National Research Foundation of Korea [2010-0013321] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

Ask authors/readers for more resources

A high efficiency blue fluorescent organic light-emitting diode without LiF electron injection layer was developed. Aluminum electrode was directly deposited on a phosphine oxide type electron transport layer and the observed quantum efficiency was as high as 6.13%. The ultraviolet photoemission spectroscopy data clearly indicated that the electron injection barrier (the offset between Al Fermi level and the lowest unoccupied molecular orbital of the organic layer) is less than 0.1 eV, which led us to believe that more efficient electron injection through the lower barrier is mainly responsible for the high efficiency. c 2011 American Institute of Physics. [doi:10.1063/1.3555443]

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