Related references
Note: Only part of the references are listed.Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment
Toru Hiyoshi et al.
APPLIED PHYSICS EXPRESS (2009)
Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation
Toru Hiyoshi et al.
APPLIED PHYSICS EXPRESS (2009)
Influence of growth conditions on irradiation induced defects in low doped 4H-SiC epitaxial layers
I. Pintilie et al.
APPLIED PHYSICS LETTERS (2007)
Lifetime-limiting defects in n- 4H-SiC epilayers -: art. no. 052110
PB Klein et al.
APPLIED PHYSICS LETTERS (2006)
Electrical characterization of metastable carbon clusters in SiC: A theoretical study
A Gali et al.
PHYSICAL REVIEW B (2006)
Annealing behavior between room temperature and 2000°C of deep level defects in electron-irradiated n-type 4H silicon carbide -: art. no. 043518
G Alfieri et al.
JOURNAL OF APPLIED PHYSICS (2005)
Deep levels created by low energy electron irradiation in 4H-SiC
L Storasta et al.
JOURNAL OF APPLIED PHYSICS (2004)
Ab initio study of the migration of intrinsic defects in 3C-SiC -: art. no. 205201
M Bockstedte et al.
PHYSICAL REVIEW B (2003)
Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals
J Wong-Leung et al.
JOURNAL OF APPLIED PHYSICS (2003)
High-purity and high-quality 4H-SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition
K Fujihira et al.
APPLIED PHYSICS LETTERS (2002)
Reduction of doping and trap concentrations in 4H-SiC epitaxial layers grown by chemical vapor deposition
T Kimoto et al.
APPLIED PHYSICS LETTERS (2001)
Share Paper
