Nano-Schottky barrier diodes based on Sb-doped ZnS nanoribbons with controlled p-type conductivity

ZnS nanoribbons (NRs) with controlled p-type doping were synthesized by using Sb as dopant. The p-type conductivity of the ZnS: Sb NRs could be tuned in a wide range of seven orders of magnitude by adjusting the Sb doping level. Nano-Schottky barrier diodes based on Al/p-ZnS NRs junctions exhibited excellent device performances with a high rectification ratio > 10(7) and a small ideality factor of similar to 1.22. The diodes also showed the potential as high-sensitive UV detectors. The p-ZnS NRs are expected to act as key building blocks in nano-optoelectronics. (C) 2011 American Institute of Physics. [doi:10.1063/1.3569590]