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APPLIED PHYSICS LETTERS
Volume 98, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3536523
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Heterojunction solar cells with Al-alloyed polycrystalline p-type beta-phase iron disilicide [p-beta-FeSi2(Al)] on n-Si(100) were investigated. The p-beta-FeSi2(Al) was grown by sputter deposition and rapid-thermal annealing. Photocurrent of similar to 1.8 mA/cm(2) and open-circuit voltage of similar to 63 mV were obtained for p-beta-FeSi2(Al)/n-Si(100)/Ti/Al control cells with indium-tin-oxide (ITO) top electrode. Open-circuit voltage increased considerably once thin Al layer was deposited before amorphous-FeSi2(Al) deposition. Furthermore, device performances were found to improve significantly (similar to 5.3 mA/cm(2) and similar to 450 mV) by introducing germanium-nitride electron-blocking layer between ITO and p-beta-FeSi2(Al). The improvement is attributed to the formation of epitaxial Al-containing p(+)-Si at p-beta-FeSi2(Al)/n-Si(100) interface and suppressed back-diffusion of photogenerated electrons into ITO. (C) 2011 American Institute of Physics. [doi:10.1063/1.3536523]
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