4.6 Article

Low-temperature electron mobilities due to ionized-impurity scattering in multisubband two-dimensional semiconductor systems

Journal

PHYSICAL REVIEW B
Volume 70, Issue 19, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.70.193312

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We present a theoretical and experimental study on the low-temperature electron mobilities due to ionized impurity scattering in a multisubband quasi-two-dimensional semiconductor system. The scattering rate is obtained from the solution the Lippmann-Schwinger equation in momentum space and the screening is considered within the random-phase approximation. A quantitative agreement is reached between the theoretical and experimental results for both the quantum and transport mobilities.

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