Extraordinary magnetoresistance in shunted chemical vapor deposition grown graphene devices

We report gate tunable linear magnetoresistances (MRs) of similar to 600% at 12 T in metal-shunted devices fabricated on chemical vapor deposition (CVD) grown graphene. The effect occurs due to decreasing conduction through the shunt as the magnetic field increases (known as the extraordinary magnetoresistance effect) and yields an MR that is at least an order-of-magnitude higher than in un-shunted graphene devices. [doi: 10.1063/1.3610565]