Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3599063
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Funding
- U.S. National Science Foundation [DMR-0906909]
- U.S. DOE [DE-AC02-06CH11357]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0906909] Funding Source: National Science Foundation
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We have used a direct x-ray phasing method, coherent Bragg rod analysis, to obtain sub-angstrom resolution electron density maps of the InAs/GaAs dot system. The dots were grown by the droplet heteroepitaxy (DHE) technique and their structural and compositional properties are compared with those of dots grown by the strain-driven Stranski-Krastanov method. Our results show that the Ga diffusion into the DHE-grown dots is somewhat larger; however, other characteristics such as the composition of the dots' uppermost layers, the interlayer spacing, and the bowing of the atomic layers are similar. (C) 2011 American Institute of Physics. [doi:10.1063/1.3599063]
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