Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3648111
Keywords
copper compounds; Fermi level; indium compounds; MOCVD; photoluminescence; semiconductor growth; semiconductor thin films; ternary semiconductors; vacuum deposition
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Funding
- TDK Corporation
- Luxembourgish Fonds National de la Recherche
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The compositional dependence of the optoelectronic quality of CuInSe2 thin film absorbers is investigated on single-and poly-crystalline films with varying [Cu]/[In]-ratios. We quantify the quality of the absorbers by the splitting of quasi-Fermi levels, determined by spectral photoluminescence. This quantity determines the maximum achievable open circuit voltage by an absorber. Our results indicate a significant increase of this value for growth under Cu-excess, indicating a decrease of recombination losses. By comparison of the predicted achievable open circuit voltage and the actually measured ones of finished solar cells, we find a huge un-utilized potential for the Cu-rich devices. (C) 2011 American Institute of Physics [doi:10.1063/1.3648111]
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