Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3651492
Keywords
energy gap; gallium arsenide; III-V semiconductors; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor quantum dots
Categories
Funding
- MEST
Ask authors/readers for more resources
We investigated the temperature-dependent variation of the photoluminescence emission energy of self-organized InAs/GaAs quantum dots (QDs) grown by conventional Stranski-Krastanov (SK) molecular beam epitaxy and migration-enhanced molecular beam epitaxy (MEMBE) and that of MEMBE InAs QDs in a symmetric and an asymmetric In0.2Ga0.8As/GaAs well. The temperature-dependent energy variation of each QD is analyzed in low and high temperature regions, including a sigmoidal behavior of conventional SK quantum dots with the well-known Varshni and semi-empirical Fan models. (C) 2011 American Institute of Physics. [doi:10.1063/1.3651492]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available