Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3648108
Keywords
Auger electron spectra; cathodoluminescence; coatings; elemental semiconductors; energy gap; nanofabrication; nanostructured materials; photoluminescence; point defects; silicon; sputter etching; stoichiometry; surface states; visible spectra; X-ray photoelectron spectra
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We report the photoluminescence (PL) and cathodoluminescence (CL) study of nanostructured poly-crystalline silicon surface fabricated by lithography-less, reactive ion etching process. Photoluminescence in visible range at room temperature with peak position between 630 nm and 720 nm is observed without any oxidation or annealing steps. X-ray photoemission (XPS) and Auger electron spectroscopy (AES) revealed the presence of silicon oxide. The observed cathodoluminescence in green and red regions of the visible spectrum are due to nano-scaled tips and their coating with nonstoichiometric silicon oxide. (C) 2011 American Institute of Physics. [doi:10.1063/1.3648108]
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