4.6 Article

Low frequency noise due to magnetic inhomogeneities in submicron FeCoB/MgO/FeCoB magnetic tunnel junctions

Journal

APPLIED PHYSICS LETTERS
Volume 99, Issue 6, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3615798

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Funding

  1. Spanish MICINN [MAT2009-10139, CSD2007-00010]
  2. CAM [P2009/MAT-1726]

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We report on room temperature low frequency noise due to magnetic inhomogeneities/domain walls (MI/DWs) in elliptic submicron FeCoB/MgO/FeCoB magnetic tunnel junctions with an area between 0.0245 and 0.0675 mu m(2). In the smaller area junctions we found an unexpected random telegraph noise (RTN1), deeply in the parallel state, possibly due to stray field induced MI/DWs in the hard layer. The second noise source (RTN2) is observed in the antiparallel state for the largest junctions. Strong asymmetry of RTN2 and of related resistance steps with current indicate spin torque acting on the MI/DWs in the soft layer at current densities below 5 x 10(5) A/cm(2). (C) 2011 American Institute of Physics. [doi:10.1063/1.3615798]

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