Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3595683
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- JSPS
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We report on evaluation of transfer accuracy in a single-electron turnstile using silicon nanowire metal-oxide-semiconductor field-effect transistors at 17 K. Single-electron shuttle transfer and single-shot detection of a single electron are used to detect errors of the transfer. Errors for the transfer through an electrostatically formed island are ascribed to thermal processes. We also observed single-electron transfer mediated by a trap level, which exhibits a wide current plateau and a low error rate. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3595683]
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