Effects of resonance scattering of electrons by donor impurities in semiconductors

A generalized formulation of the Friedel approach is given and a theoretical description of the effects of resonance scattering of conduction electrons by donor impurities in semiconductors is developed. The stabilization of the electron density when the Fermi energy reaches the resonance level and the temperature and concentration dependences of the electron mobility and magnetic susceptibility of the localized resonance states are considered in detail. The limits of applicability of the results are discussed. (C) 2004 American Institute of Physics.