Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3664776
Keywords
cadmium compounds; II-VI semiconductors; mercury compounds; quantum Hall effect; semiconductor quantum wells; spin Hall effect; wide band gap semiconductors
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Funding
- National Natural Science Foundation of China [10974052, 60625402]
- Open Subject of Institute of Semiconductors, Chinese Academy of Science [KLSMS-1008]
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We study the electronic band, density distribution, and transport property for a HgTe/CdTe quantum well Hall bar with finite-width in the presence of a transverse electric field. It is found that the electric field can lead to a topological phase transition which controls edge state properties. Interestingly, the chirality of edge states can be modified under electric field, and a sufficient high field can remove the spectrum gap induced by the coupling between the edge states in a narrow Hall bar, restoring quantum spin-Hall effect. These findings may provide a fundamental understanding of topological edge states. (C) 2011 American Institute of Physics. [doi:10.1063/1.3664776]
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