4.6 Article

Effect of transverse electric field on helical edge states in a quantum spin-Hall system

Journal

APPLIED PHYSICS LETTERS
Volume 99, Issue 22, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3664776

Keywords

cadmium compounds; II-VI semiconductors; mercury compounds; quantum Hall effect; semiconductor quantum wells; spin Hall effect; wide band gap semiconductors

Funding

  1. National Natural Science Foundation of China [10974052, 60625402]
  2. Open Subject of Institute of Semiconductors, Chinese Academy of Science [KLSMS-1008]

Ask authors/readers for more resources

We study the electronic band, density distribution, and transport property for a HgTe/CdTe quantum well Hall bar with finite-width in the presence of a transverse electric field. It is found that the electric field can lead to a topological phase transition which controls edge state properties. Interestingly, the chirality of edge states can be modified under electric field, and a sufficient high field can remove the spectrum gap induced by the coupling between the edge states in a narrow Hall bar, restoring quantum spin-Hall effect. These findings may provide a fundamental understanding of topological edge states. (C) 2011 American Institute of Physics. [doi:10.1063/1.3664776]

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available