Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3622138
Keywords
-
Categories
Funding
- Human Frontier Science Program
- Center for Nanoscale Mechatronics
- NRF [20100000160]
- Priority Research Center [20100029617]
- MEST [KRF-2008-313-C00308]
Ask authors/readers for more resources
We use atomic force microscopy lithography to write charge patterns in close proximity to carbon nanotube field-effect transistor devices. The silicon dioxide substrate retains the charge for days, allowing various charge configurations to be tested. We show that the written charge can move the Fermi level in the nanotube by 1 eV and we use this charge lithography to reconfigure a field-effect transistor into a pn junction. The substrate charge can be erased and rewritten, offering a new tool for prototyping nanodevices and optimizing electrostatic doping profiles. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3622138]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available