Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3601928
Keywords
-
Categories
Funding
- DARPA
- AFOSR
- A*STAR
Ask authors/readers for more resources
In this letter, the performance characteristics of top-gate and dual-gate thin-film transistors (TFTs) with active semiconductor layers consisting of diketopyrrolopyrrole-naphthalene copolymer are described. Optimized top-gate TFTs possess mobilities of up to 1 cm(2)/V s with low contact resistance and reduced hysteresis in air. Dual-gate devices possess higher drive currents as well as improved subthreshold and above threshold characteristics compared to single-gate devices. We also describe the reasons that dual-gate devices result in improved performance. The good stability of this polymer combined with their promising electrical properties make this material a very promising semiconductor for printable electronics. (C) 2011 American Institute of Physics. [doi:10.1063/1.3601928]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available