Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3647976
Keywords
multilayers; organic semiconductors; polymer blends; random-access storage; thin film transistors
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Funding
- National Science Council
- Bureau of Energy, Ministry of Economic Affairs of Taiwan, ROC [100-2221-E-006-040-MY2, 100-D0204-6]
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A wide hysteresis width characteristic (memory window) was observed in the organic thin film transistors (OTFTs) using poly(2-hydroxyethyl methacrylate) (PHEMA)-based polymer multilayers. In this study, a strong memory effect was also found in the pentacene-based OTFTs and the electric characteristics were improved by introducing PHEMA/poly(methyl methacrylate) (PMMA)/PHEMA trilayer to replace the conventional PHEMA monolayer or PMMA/PHEMA and PHEMA/PMMA bilayer as the dielectric layers of OTFTs. The memory effect was originated from the electron trapping and slow polarization of the dielectrics. The hydroxyl (-OH) groups inside the polymer dielectric were the main charge storage sites of the electrons. This charge-storage phenomenon could lead to a wide flat-band voltage shift (memory window, Delta V-FB = 22 V) which is essential for the OTFTs' memory-related applications. Moreover, the fabricated transistors also exhibited significant switchable channel current due to the charge-storage and slow charge relaxation. (C) 2011 American Institute of Physics. [doi:10.1063/1.3647976]
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