Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3647559
Keywords
bismuth compounds; carrier lifetime; electrical contacts; nanowires; optical modulation; photoconductivity; photodetectors
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Funding
- AFOSR
- WCU at SNU
- NRI/NSF [DMR0520651]
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The mechanism of the photoconductive gains of nanowire (NW) photodetectors has not been clearly explained yet, although it is generally thought to be the result of a long excess carrier lifetime due to a large trap density. Here, we demonstrate that the photoconductive gain of a Bi2S3 NW photodetector can be contributed by optical modulation of the electrical injection through contacts. We propose a quantitative model to explain the results based on a model of metal-nanowire contacts. The study shows that optically generated excess carriers can modify the barrier structure at the metal-nanowire interface and thereby increase photoconductivity. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3647559]
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