Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3644132
Keywords
chemical variables measurement; domain boundaries; gallium compounds; Hall effect; III-V semiconductors; magnesium; secondary ion mass spectra; transmission electron microscopy; vacancies (crystal); wide band gap semiconductors
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The structure of pyramidal inversion domain boundaries in GaN:Mg was investigated by aberration corrected transmission electron microscopy. The analysis shows the upper (0001) boundary to consist of a single Mg layer inserted between polarity inverted GaN layers in an abcab stacking. The Mg bound in these defects is at least one order of magnitude lower than the chemical Mg concentration. Temperature dependent Hall effect measurements show that up to 27% of the Mg acceptors is electrically compensated. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3644132]
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