Deep levels in tungsten doped n-type 3C-SiC

Tungsten was incorporated in SiC and W related defects were investigated using deep level transient spectroscopy. In agreement with literature, two levels related to W were detected in 4H-SiC, whereas only the deeper level was observed in 6H-SiC. The predicted energy level for W in 3C-SiC was observed (E-C-0.47 eV). Tungsten serves as a common reference level in SiC. The detected intrinsic levels align as well: E1 (E-C-0.57 eV) in 3C-SiC is proposed to have the same origin, likely V-C, as EH6/7 in 4H-SiC and E7 in 6H-SiC, respectively. (C) 2011 American Institute of Physics. [doi:10.1063/1.3579527]