Optical gain observation on silicon nanocrystals embedded in silicon nitride under femtosecond pumping

We report the observation of positive optical gain in silicon nanocrystals (Si-nc) embedded in silicon nitride measured by the variable stripe length technique. We evidence the onset of stimulated emission and report gain coefficients up to 52 cm(-1) at the highest excitation power (6.5 W/cm(2)). Photoluminescence dynamics presents two distinct recombination lifetimes in the nanosecond and the microsecond ranges. This was interpreted in terms of fast carrier trapping in nitrogen-induced localized states in the Si-nc surface and subsequent slow radiative recombination, suggesting that carrier trapping in radiative surface states plays a crucial role in the optical gain mechanism of Si-nc. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3607276]