Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3623485
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A one-dimensional model of filament growth in conductive-bridge memory cells is presented, in which ions are thermally excited from the anode surface into the electrolyte, pulled by the electric field through a periodic series of wells and reduced at the cathode to form a metallic filament. The voltage, temperature, and thickness dependencies of the time required to program a cell are calculated, and material parameters for Ag/GeS2/W cells are obtained by comparison to experiment. The relation of the model to recent observations of quantized conductance is highlighted, as is the need for further study of the Ag/GeS2 interface. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3623485]
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