Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3623479
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- United States Department of Defense
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We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm that the energetics are determined by the gate-induced electrostatic potentials. Pauli spin blockade has been observed via transport through the double dot in the two electron configuration, a critical step in performing coherent spin manipulations in Si. (C) 2011 American Institute of Physics. [doi:10.1063/1.3623479]
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