Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3662014
Keywords
-
Categories
Funding
- National Science Foundation [DMR-1004804]
- DOE [DE-FG02-07ER46386]
- U.S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1004804] Funding Source: National Science Foundation
Ask authors/readers for more resources
Zinc oxide single crystals were doped with copper acceptors by means of the nuclear transmutation doping method, which gives highly uniform dopant distributions and has a much higher probability of controlling the dopant locations in the lattice. The Cu doping was confirmed by the infrared absorption signature of Cu2+ at 5780 cm(-1). Hall-effect measurements were performed to study the effect of Cu-Zn on the electrical properties of ZnO. These measurements indicated that the Cu acceptor level lies 0.160 eV below the conduction-band minimum. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3662014]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available