4.6 Article

Imaging dissipation and hot spots in carbon nanotube network transistors

Journal

APPLIED PHYSICS LETTERS
Volume 98, Issue 7, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3549297

Keywords

-

Funding

  1. NSF [ECCS 0954423]
  2. NRI through the Nano-CEMMS Center
  3. Micron Technology Foundation
  4. NDSEG Fellowship

Ask authors/readers for more resources

We use infrared thermometry of carbon nanotube network (CNN) transistors and find the formation of distinct hot spots during operation. However, the average CNN temperature at breakdown is significantly lower than expected from the breakdown of individual nanotubes, suggesting extremely high regions of power dissipation at the CNN junctions. Statistical analysis and comparison with a thermal model allow the estimate of an upper limit for the average tube-tube junction thermal resistance, similar to 4.4 x 10(11) K/W (thermal conductance of similar to 2.27 pW/K). These results indicate that nanotube junctions have a much greater impact on CNN transport, dissipation, and reliability than extrinsic factors such as low substrate thermal conductivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3549297]

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available