Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3567545
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Funding
- NSF Materials World Network [1008480]
- Engineering and Physical Sciences Research Council
- Royal Academy of Engineering
- Royal Society
- EPSRC [EP/H047816/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/H047816/1] Funding Source: researchfish
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1008480] Funding Source: National Science Foundation
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Microdisks incorporating InGaN quantum dots were fabricated using SiO2 microspheres as a hard mask in conjunction with a photoelectrochemical etch step from a structure containing a sacrificial InGaN/InGaN superlattice. Formation of microdisks from two near-identical structures with differing dislocation densities was carried out and investigated using microphotoluminescence. This confirmed the existence of quantum dots through the presence of resolution limited spectral lines and showed a clear correlation between the resulting modes quality factors and the dislocation densities within the disks. The disks with higher dislocation densities showed up to 80% lower quality factors than the low dislocation density disks. (C) 2011 American Institute of Physics. [doi:10.1063/1.3567545]
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