In situ doping of graphene by exfoliation in a nitrogen ambient

We present an in situ method of n-doping graphene by exfoliating in an N-ambient. By exfoliating single-layer graphene in a nitrogen-rich environment, the dopant specie plays an active role in minimizing C-C reconstruction that typically occurs at the moment of defect generation. Employing such in situ methods provides an efficient mechanism of passivating defects produced during graphene growth and transfer, as well as a means of controllably incorporating dopant species into the graphene lattice. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562018]