Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3457785
Keywords
carrier density; doping; electrochemistry; electron mobility; strontium compounds; transistors
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Funding
- Ministry of Education, Culture, Sports, Science, and Technology of Japan [21686002, 21224009, 21654046]
- Mikiya Science and Technology Foundation
- Murata Science Foundation
- Nippon Sheet Glass Foundation for Materials Science and Engineering
- Grants-in-Aid for Scientific Research [21686002, 21654046] Funding Source: KAKEN
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In electric double layer transistors with SrTiO3 single crystals, we found distinct differences between electrostatic charge accumulation and electrochemical reaction depending on bias voltages. In contrast to the reversible electrostatic process below 3.7 V with a maximum sheet charge carrier density, n(S), of 10(14) cm(-2), the electrochemical process causes persistent conduction even after removal of the gate bias above 3.75 V. n(S) reached 10(15) cm(-2) at 5 V, and the electron mobility at 2 K was as large as 10(4) cm(2)/V s. This persistent conduction originates from defect formation within a few micrometers depth of SrTiO3. (C) 2010 American Institute of Physics. [doi:10.1063/1.3457785]
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