Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3291044
Keywords
annealing; bismuth compounds; epitaxial layers; ferroelectric materials; ferroelectric thin films; leakage currents; multiferroics; particle backscattering; stoichiometry; vacancies (crystal)
Categories
Funding
- U.S. Department of Energy
- Center for Integrated Nanotechnologies
Ask authors/readers for more resources
Epitaxial c-axis oriented BiFeO3 (BFO) films were fabricated on (001) oriented SrTiO3 substrates by pulsed laser deposition. Nuclear resonance backscattering spectrometry was used to directly measure the oxygen concentration of as-deposited and annealed BFO films. Compared to the ideal stoichiometry of BFO, the as-deposited BFO film shows more than 10% oxygen deficiency. However, postannealing the as-deposited BFO films reduces the oxygen deficiency almost half. The reduced oxygen vacancies in annealed BFO films are believed to be responsible for the different leakage mechanisms and the two orders of magnitude drop in leakage current density.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
