Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3462916
Keywords
carrier lifetime; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; wide band gap semiconductors
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We study differential carrier lifetimes in InGaN light-emitting diodes (LEDs) of varying wavelengths. Increase in wavelength is correlated with an increase in lifetime, due to the impact of the polarization fields on carrier overlap. This effect explains the early onset of droop in longer-wavelength LEDs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3462916]
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