Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3532845
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Funding
- Penn State MRSEC [NSF-DMR-0820404]
- ONR [N00014-09-1-0221, N00014-09-1-0309]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0801388] Funding Source: National Science Foundation
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We report the heteroepitaxy of single crystal thin films of Bi2Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the Bi2Se3, we demonstrate the growth of thin films with atomically flat terraces over hundreds of nanometers. Initial time-resolved Kerr rotation measurements herald opportunities for probing coherent spin dynamics at the interface between a candidate topological insulator and a large class of GaAs-based heterostructures. (C) 2010 American Institute of Physics. [doi:10.1063/1.3532845]
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