Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3429024
Keywords
Auger electron spectra; electrical conductivity transitions; electrical resistivity; magnesium compounds; MIM devices; platinum; random-access storage; thin films; X-ray photoelectron spectra
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Funding
- Ministry of Economic Affairs of Republic of China [98-EC-17-A-08-S1-006]
- National Science Council of Republic of China [98-2622-E-007-003]
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Nonpolar resistive switching (RS), which is the coexistence of unipolar and bipolar RS characteristics, in the Pt/MgO/Pt memory device with the nonforming nature is demonstrated. The nonforming nature is ascribed to the relatively high defect density of the MgO film deposited by using the ion beam sputtering in Ar atmosphere. The results of Auger electron spectroscopy and x-ray photoelectron spectroscopy analyses combing with the temperature dependence of resistance suggest that metallic Mg filaments are formed in the low resistance state. The voltage-polarity-independent RESET process implies that filaments may be ruptured by local Joule heating, leading to nonpolar characteristics. (C) 2010 American Institute of Physics. [doi:10.1063/1.3429024]
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