Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3377908
Keywords
aluminium compounds; amorphous magnetic materials; boron alloys; cobalt alloys; composite materials; ferromagnetic materials; III-V semiconductors; iron alloys; magnetic anisotropy; magnetic annealing; magnetic field measurement; magnetic sensors; magnetoelectric effects; silicon; silicon alloys; sputtered coatings; thin films; wide band gap semiconductors
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Funding
- German Science Foundation (DFG) [SFB 855]
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Thin film magnetoelectric (ME) two-two composites consisting of AlN and amorphous (Fe90Co10)(78)Si12B10 layers were fabricated by magnetron sputtering on Si (100) substrates. Upon magnetic field annealing they show an extremely high ME coefficient of 737 V/cm Oe at mechanical resonance at 753 Hz and 3.1 V/cm Oe out of resonance at 100 Hz. These are the highest reported ME coefficients in thin film composites ever. Furthermore, the induced magnetic anisotropy by field annealing serves the possibility to obtain a sensor element with a pronounced sensitivity in only one dimension, which allows the realization of a three-dimensional vector field sensor. (C) 2010 American Institute of Physics. [doi:10.1063/1.3377908]
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