Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3368697
Keywords
annealing; charge exchange; doping profiles; graphene; narrow band gap semiconductors; nitrogen; plasma materials processing; semiconductor doping
Categories
Funding
- NTHU booster project
- TSMC JDP project [NTHU0905]
- Taiwan National Science Council [NSC 97-2112-M-007-016-MY3]
Ask authors/readers for more resources
Here we show that gas-phase doping by means of NH3 plasma exposure is a highly flexible and manufacturable process for graphene electronics. The nitrogen-containing radicals can readily form covalent bonds with the carbon lattice and keep stable in the postannealing for damage restoration. The amount of charge transfer can be fine tuned by controlling the exposure time and monitored by the systematic shift in the Raman G mode and the G(ds)-V-g curves in transport measurements. The maximum doping level can reach 1.5x10(13) cm(-2).
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
