Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3511756
Keywords
-
Categories
Funding
- National Science Council of the Republic of China [98-2622-E-006-044-CC3, 98-2112-M-415-001-MY3]
Ask authors/readers for more resources
A hybrid resistance switching device consisting of ZnO nanorods embedded in an insulating polymethylmethacrylate (PMMA) heterostructure sandwiched between a transparent conductive film and an Al electrode is proposed. The current-voltage characteristics of the device are discussed in terms of the formation and rupture of its conductive filaments. The hybrid device shows stable electrical bistable behaviors after more than 200 resistance-switching cycles. The hybrid ZnO nanorod/PMMA device presented in this work has potential applications in the field of bistable random access memory devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3511756]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available