Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3324704
Keywords
amorphous semiconductors; elemental semiconductors; plasma CVD; semiconductor device reliability; semiconductor growth; semiconductor thin films; silicon; silicon compounds; solar cells
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Funding
- Swiss Federal Office for Energy
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The deposition of thin-film silicon solar cells on highly textured substrates results in improved light trapping in the cell. However, the growth of silicon layers on rough substrates can often lead to undesired current drains, degrading performance and reliability of the cells. We show that the use of a silicon oxide interlayer between the active area and the back contact of the cell permits in such cases to improve the electrical properties. Relative increases of up to 7.5% of fill factor and of 6.8% of conversion efficiency are shown for amorphous silicon cells deposited on highly textured substrates, together with improved yield and low-illumination performance.
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