3.8 Article

Oxygen vacancy induced substantial threshold voltage shifts in the Hf-based high-K MISFET with p+poly-Si gates -: A theoretical approach

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Publisher

JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.43.L1413

Keywords

high-k dielectrics; poly-Si-gate electrode; Fermi level pinning; theory; oxygen vacancy; HfO2; flatband shift; threshold voltage shift

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A theoretical investigation has been made of the origin of substantial threshold voltage (V-th) shifts observed in p+poly-Si.gate Hf-based metal insulator semiconductor field effect transistors (MISFETs), by focusing on the effect of oxygen vacancy (V-O) formation in HfO2. It has been found that V-O formation and subsequent electron transfer across the interface definitely causes substantial V-th shifts, especially in p+poly-Si gate MISFETs. Moreover, the theory also systematically reproduces recent experimental reports that large flat band (V-fb) shifts are observed, even in intrinsic poly-Si gates, and that the Vfb Shifts exhibit a high dependence on HfSiOx thickness.

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