Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3386542
Keywords
electrical conductivity; elemental semiconductors; gallium arsenide; gallium compounds; germanium; high-speed optical techniques; III-V semiconductors; optical saturable absorption; refractive index; terahertz waves
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Funding
- Danish Advanced Technology Foundation (HTF)
- Max Planck Society
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We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP, and Ge in the terahertz (THz) frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of semiconductors at high electron momentum states, due to conduction band nonparabolicity and scattering into satellite valleys in strong THz fields. Saturable absorber parameters, such as linear and nonsaturable transmission, and saturation fluence, are extracted by fits to a classic saturable absorber model. Further, we observe THz pulse shortening, and an increase in the group refractive index of the samples at higher THz pulse peak fields.
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