Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3386529
Keywords
cadmium compounds; energy gap; II-VI semiconductors; semiconductor epitaxial layers; semiconductor junctions; solar cells; thin film devices; wide band gap semiconductors; zinc compounds
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CdTe is one of the leading materials used in solar photovoltaics. However, the maximum reported CdTe cell efficiencies are considerably lower than the theoretically expected efficiencies for the similar to 1.48 eV CdTe band gap. We report a class of single crystal CdTe-based solar cells grown epitaxially on crystalline Si that show promise for enhancing the efficiency and greatly lowering the cost per watt of single-junction and multijunction solar cells. The current-voltage results for our CdZnTe on Si solar cells show open-circuit voltages significantly higher than previously reported for any II-VI cells and as close to the thermodynamic limit as the best III-V-based cells.
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