Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3301614
Keywords
electroluminescence; gallium compounds; II-VI semiconductors; light emitting diodes; magnesium compounds; refractive index; semiconductor heterojunctions; zinc compounds
Categories
Funding
- 973 Program [2006CB604906]
- CAS [KJCX3.SYW.W01, YZ200903]
- NNSFC [10774132, 60776011]
- Science and Technology Developing Project of Jilin Province [20090124]
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The electroluminescence from an n-MgZnO/i-ZnO/MgO/p-GaN asymmetric double heterojunction has been demonstrated. With the injection of electrons from n-MgZnO and holes from p-GaN, an intense ultraviolet emission coming from the ZnO active layer was observed. It is revealed that the emission intensity of the diode recorded from the MgZnO side is significantly larger than that from the MgO side because of the asymmetric waveguide structure formed by the lower refractive index of MgO than that of MgZnO. The asymmetric waveguide structure reported in this letter may promise a simple and effective route to light-emitting diodes with improved light-extraction efficiency.
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