Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3460912
Keywords
gallium arsenide; III-V semiconductors; indium compounds; quantum confined Stark effect; semiconductor quantum dots; semiconductor quantum wells
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Funding
- EU through the IST [015848]
- EPSRC
- TREL
- QIPIRC
- Engineering and Physical Sciences Research Council [EP/E058019/1] Funding Source: researchfish
- EPSRC [EP/E058019/1] Funding Source: UKRI
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We study the quantum-confined Stark effect in single InAs/GaAs quantum dots embedded within a AlGaAs/GaAs/AlGaAs quantum well. By significantly increasing the barrier height we can observe emission from a dot at electric fields of 500 kV cm(-1), leading to Stark shifts of up to 25 meV. Our results suggest this technique may enable future applications that require self-assembled dots with transitions at the same energy. (C) 2010 American Institute of Physics. [doi:10.1063/1.3460912]
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